PTFC270101M_16 Datasheet, PDF (15/22 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

PTFC270101M
RF Characteristics
Two-carrier WCDMA Characteristics (not subject to production test)
V_DD = 28 V, I_DQ = 120 mA, P_OUT = 1.3 W avg, ƒ₁ = 2650 MHz, ƒ₂ = 2660 MHz,
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
—
18.2
_D
—
19.7
IMD
—
–45
Typical RF Performance, 2620 – 2690 MHz (data taken in production test fixture)
Max
—
—
—
Unit
dB
%
dBc
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
20
60
19
50
Gain
18
40
17
30
16
20
Efficiency
15
10
14
24
27
30
33
36
39
c270101m-2.6-gr1a
0
42
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
20
60
19
50
18
40
Gain
17
30
16
Efficiency ²⁰
15
10
14
24
27
30
33
36
39
c270101m-2.6-gr1b
0
42
Output Power (dBm)
Data Sheet
15 of 22
Rev. 04.1, 2016-07-26