PTFC270101M_16 Datasheet, PDF (1/22 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

PTFC270101M
High Power RF LDMOS Field Effect Transistor
10 W, 28 V, 900 – 2700 MHz
Description
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable
for power amplifier applications with frequencies from 900 MHz to
2700 MHz. This LDMOS transistor offers excellent gain, efficiency
and linearity performance in a small overmolded plastic package.
PTFC270101M
Package PG-SON-10
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
23
70
22
60
Gain
21
50
20
40
19
30
18
20
Efficiency
17
10
16
c270101m-2.1-gr1c
0
24 26 28 30 32 34 36 38 40
Output Power (dBm)
Features
• Unmatched input and output
• Typical CW performance, 2170 MHz, 28 V
- Output power @ P_1dB = 10 W
- Gain = 20 dB
- Efficiency = 60%
• Typical two-carrier WCDMA performance, 2170
MHz, 28 V, 8 dB PAR
- Output power = 1.3 W avg
- Gain = 21 dB
- Efficiency = 21%
- ACPR = –44.9 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @ 28 V, 10 W
(CW) output power
• Integrated ESD protection
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
V_DD = 28 V, I_DQ = 120 mA, P_OUT = 2.4 W avg, ƒ = 2170 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min Typ
Gain
G_ps
19.5 20.5
Max
—
Unit
dB
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 22
Rev. 04.1, 2016-07-26