XC164N Datasheet, PDF (20/68 Pages) Infineon Technologies AG – 16-Bit Single-Chip Microcontroller with C166SV2 Core

XC164N
Derivatives
Functional Description
3.1
Memory Subsystem and Organization
The memory space of the XC164N is configured in a Von Neumann architecture, which
means that all internal and external resources, such as code memory, data memory,
registers and I/O ports, are organized within the same linear address space. This
common memory space includes 16 Mbytes and is arranged as 256 segments of
64 Kbytes each, where each segment consists of four data pages of 16 Kbytes each.
The entire memory space can be accessed bytewise or wordwise. Portions of the on-
chip DPRAM and the register spaces (E/SFR) have additionally been made directly
bitaddressable.
The internal data memory areas and the Special Function Register areas (SFR and
ESFR) are mapped into segment 0, the system segment.
The Program Management Unit (PMU) handles all code fetches and, therefore, controls
accesses to the program memories, such as Flash memory and PSRAM.
The Data Management Unit (DMU) handles all data transfers and, therefore, controls
accesses to the DSRAM and the on-chip peripherals.
Both units (PMU and DMU) are connected via the high-speed system bus to exchange
data. This is required if operands are read from program memory, code or data is written
to the PSRAM, code is fetched from external memory, or data is read from or written to
external resources, including peripherals on the LXbus. The system bus allows
concurrent two-way communication for maximum transfer performance.
128 Kbytes of on-chip Flash memory store code or constant data. The on-chip Flash
memory is organized as four 8-Kbyte sectors, one 32-Kbyte sector, and one 64-Kbyte
sectors. Each sector can be separately write protected¹⁾, erased and programmed (in
blocks of 128 Bytes). The complete Flash area can be read-protected. A password
sequence temporarily unlocks protected areas. The Flash module combines very fast
64-bit one-cycle read accesses with protected and efficient writing algorithms for
programming and erasing. Thus, program execution out of the internal Flash results in
maximum performance. Dynamic error correction provides extremely high read data
security for all read accesses.
Programming typically takes 2 ms per 128-byte block (5 ms max.), erasing a sector
typically takes 200 ms (500 ms max.).
2 Kbytes of on-chip Program SRAM (PSRAM) are provided to store user code or data.
The PSRAM is accessed via the PMU and is therefore optimized for code fetches.
2 Kbytes of on-chip Data SRAM (DSRAM) are provided as a storage for general user
data.The DSRAM is accessed via the DMU and is therefore optimized for data accesses.
2 Kbytes of on-chip Dual-Port RAM (DPRAM) are provided as a storage for user
defined variables, for the system stack, general purpose register banks. A register bank
can consist of up to 16 wordwide (R0 to R15) and/or bytewide (RL0, RH0, …, RL7, RH7)
1) Each two 8-Kbyte sectors are combined for write-protection purposes.
Data Sheet
15
V1.0, 2005-01