English
Language : 

TLE7368_10 Datasheet, PDF (18/41 Pages) Infineon Technologies AG – Next Generation Micro Controller Supply
TLE7368
General Product Characteristics
Electrical Characteristics (cont’d)
VIN = VIN_STBY = 13.5 V, Tj = -40 °C to +150 °C,
VCCP = 9.0 V; SEL_STBY = Q_STBY; all voltages with respect to ground.
Pos. Parameter
Symbol
Limit Values
Unit
Conditions
Min. Typ. Max.
4.4.79 Undervoltage Reset
VURT Q_LDO1, 4.50 –
threshold on Q_LDO1 de
4.4.80 Undervoltage Reset
VURT Q_LDO1, 4.55 –
threshold on Q_LDO1 in
4.4.81 Undervoltage Reset
hysteresis
VURO_1, hyst 100
–
4.75 V
4.90 V
VQ_LDO1 decreasing;
VFB/L_IN = open;
VQ_LDO1 increasing
220 mV –
4.4.82 Overvoltage Reset
VORT Q_LDO1, 5.40 –
threshold on Q_LDO1 in
4.4.83 Overvoltage Reset
VORT Q_LDO1, 5.25 –
threshold on Q_LDO1 de
4.4.84 Overvoltage Reset
hysteresis
VORO_1, hyst 80
–
5.65 V
VQ_LDO1 increasing
5.60 V
VQ_LDO1 decreasing
180 mV –
4.4.85 RO_1, Reset output low VRO_1, low
–
–
voltage
4.4.86 RO_1, Reset output low VRO_1, low
–
–
voltage
4.4.87 RO_1, Reset output
IRO_1, high
-1
–
leakage
0.4 V
IRO_1 = -10 mA;
VQ_LDO1 > 2.5 V
0.25 V
VIN_STBY = 3.0 V;
VQ_LDO1 = 2.5V;
IRO_1 = -500 µA;
1
µA VRO_1 = 5.0 V
4.4.88
4.4.89
Reset delay time base
Reset timing capacitor
range
Tcycle
CRT
41.6 50
0.33 1.0
62.5 µs
4.7 nF
CRT = 1 nF
–
4.4.90 Reset delay time RO_1 tRD, RO_1
–
4.4.91 Undervoltage Reset
reaction time
tUVRR, RO_1
2
160 –
–
10
Tcycle –
µs Voltage step at Q_LDO1 from
5.00 V to 4.48 V
4.4.92 Overvoltage Reset
reaction time
tOVRR, RO_1 20
–
80 µs Buck converter operating;
Voltage step at Q_LDO1 from
5.00 V to 5.67 V
Reset Generator RO_2 Monitoring Q_LDO2 and FB_EXT
4.4.93
4.4.94
4.4.95
4.4.96
Undervoltage Reset
VURT Q_LDO2, 3.135 –
threshold on Q_LDO2 de
3.230 V
Undervoltage Reset
VURT Q_LDO2, 55
117.5 –
mV
headroom on Q_LDO2 head
Undervoltage Reset
VURO_2, hyst 15
–
hysteresis Q_LDO2
Overvoltage Reset
VORT Q_LDO2, 3.70 –
threshold on Q_LDO2 in
55 mV
3.85 V
SEL_LDO2 = Q_LDO2;
VQ_LDO2 decreasing;
VIN_LDO2 = open
SEL_LDO2 = Q_LDO2;
VURT Q_LDO2, head
= VQ_LDO2 - VURT Q_LDO2, de;
VQ_LDO2 @ IQ_LDO2 = 500 mA
SEL_LDO2 = Q_LDO2;
VURO_2, hyst
V V = URT Q_LDO2, in - URT Q_LDO2, de
SEL_LDO2 = Q_LDO2;
VQ_LDO2 increasing
Data Sheet
18
Rev. 2.1, 2010-11-22