TLE7368_10 Datasheet, PDF (16/41 Pages) Infineon Technologies AG – Next Generation Micro Controller Supply

TLE7368
General Product Characteristics
Electrical Characteristics (cont’d)
V_IN = V_{IN_STBY} = 13.5 V, T_j = -40 °C to +150 °C,
V_CCP = 9.0 V; SEL_STBY = Q_STBY; all voltages with respect to ground.
Pos. Parameter
Symbol
Limit Values
Unit
Min. Typ. Max.
4.4.51 Power supply ripple PSRR_{Q_T1} 26
–
–
dB
rejection
4.4.52 Output capacitor
4.4.53 Output capacitor
Voltage Tracker Q_T2
C_{Q_T1}
4.7 –
ESR C_{Q_T1} 0
–
4.4.54
Output voltage tracking ∆V_{Q_T2}
accuracy to Q_LDO1
-10 –
4.4.55 Output current limitation I_{Q_T2}
60 –
4.4.56 Drop voltage
V_{dr, Q_T2}
–
–
–
µF
3
Ω
10 mV
110 mA
400 mV
4.4.57 Power supply ripple PSRR_{Q_T2} 26
–
–
dB
rejection
4.4.58 Output capacitor
4.4.59 Output capacitor
Stand-by Regulator
4.4.60 Output voltage
C_{Q_T2}
4.7 –
–
µF
ESR C_{Q_T2} 0
–
3
Ω
V_{Q_STBY}
0.93 1.02 1.08 V
4.4.61 Output voltage
V_{Q_STBY}
0.93 1.02 1.08 V
4.4.62 Output voltage
V_{Q_STBY}
2.51 2.62 2.73 V
4.4.63 Selector pull-up current I_{SEL_STBY}
-2
-5
4.4.64 Output current limitation I_{Q_STBY, lim} 31
–
-10 µA
90 mA
Conditions
V_{FB/L_IN} = 5.6 V;
V_{FB/L_IN, ripple pp} = 150 mV;
f_{FB/L_IN, ripple} = 370 kHz;
V_{Q_LDO1} = 5.0 V;
I_{Q_T1} = 100 mA;
C_{Q_T1} = 4.7µF ceramic X7R;¹⁾
1)5)
at 10 kHz;¹⁾
0 mA < I_{Q_T2} < 50 mA;
V_{Q_T2} = 4.0 V
I_{Q_T2} = 50 mA;
V_{FB/L_IN} = 5.3 V;
V_{Q_LDO1} = 5.0 V⁴⁾
V_{FB/L_IN} = 5.6 V;
V_{FB/L_IN, ripple pp} = 150 mV;
f_{FB/L_IN, ripple} = 370 kHz;
V_{Q_LDO1} = 5.0 V;
I_{Q_T2} = 40 mA;
C_{Q_T2} = 4.7 µF ceramic X7R;¹⁾
1)5)
at 10 kHz;¹⁾
V_{IN_STBY} > 3 V;
100 µA < I_{Q_STBY} < 10 mA;
SEL_STBY = Q_STBY
V_{IN_STBY} > 4.5 V;
I_{Q_STBY} = 30 mA;
SEL_STBY = Q_STBY
V_{IN_STBY} > 3.0 V;
100 µA < I_{Q_STBY} < 10 mA;
SEL_STBY = GND
SEL_STBY = GND
V_{Q_ STBY} = 0.5 V
Data Sheet
16
Rev. 2.1, 2010-11-22