HYS64D32020GDL5C Datasheet, PDF (18/30 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

HYS64D[32020/16000][H/G]DL–[5/6]–C
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 11 I_DD Specification for HYS64D[32020/16000][H/G]DL–[5/6]–C
Unit Note ¹⁾²⁾
128MB
256MB
128MB
256MB
×64
×64
×64
×64
1 Ranks
2 Ranks
1 Ranks
2 Ranks
–5
–5
–6
–6
Symbol Typ. Max. Typ. Max. Typ. Max. Typ. Max.
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
300 360
380 440
16
20
120 144
80
112
52
72
172 216
400 480
400 520
560 760
5.6 11.2
840 1000
472
552
32
240
160
104
344
572
572
732
11.2
1012
576
656
40
288
224
144
432
696
736
976
22.4
1216
260 300
320 380
16
20
100 120
68
96
44
60
144 180
340 400
360 440
480 640
6
11
720 860
404 480
mA
3)
464 560
mA
3)4)
32
40
mA
5)
200 240
mA
5)
136 192
mA
5)
88
120
mA
5)
288 360
mA
5)
484 580
mA
3)4)
504 620
mA
3)
624 820
mA
3)
11
22
mA
5)
864 1040 mA ³⁾⁴⁾
1) Module I_DD values are calculated on the basis of component I_DD and can be measured differently according to DQ loading
capacity.
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the I_DDx values of the component data sheet as follows:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included in the calculations (see note 1)
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
18
Rev. 1.0, 2004-03