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TLE7258D_15 Datasheet, PDF (17/31 Pages) Infineon Technologies AG – TLE7258D
5
General Product Characteristics
TLE7258D
General Product Characteristics
5.1
Absolute Maximum Ratings
Table 3 Absolute Maximum Ratings Voltages, Currents and Temperatures1)
All voltages with respect to ground; positive current flowing into pin; unless otherwise specified
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Max.
Voltages
Battery supply voltage
VS
BUS input voltage
VBUS,G
Logic voltages at EN, TxD, RxD Vlogic
Currents
-0.3
40
-27
40
-0.3
6.0
V
LIN Spec 2.2A (Par. 11)
V
–
V
–
Output current at RxD
Temperatures
IRxD
0
15
mA –
Junction temperature
Storage temperature
ESD Susceptibility
Tj
-40
150
°C –
Ts
-55
150
°C –
Electrostatic discharge voltage VESD
-4
4
at VS
Electrostatic discharge voltage VESD
-6
6
at BUS
kV Human Body Model
(100 pF via 1.5 kΩ)2)
kV Human Body Model
(100 pF via 1.5 kΩ)3)
Electrostatic discharge voltage VESD
-4
4
all other pins
kV Human Body Model
(100 pF via 1.5 kΩ)2)
Electrostatic discharge voltage VESD
-1
1
all pins
kV Charged Device Model4)
1) Not subject to production test, specified by design
2) ESD susceptibility HBM according to ANSI / ESDA / JEDEC JS-001
3) ESD susceptibility HBM according to ANSI / ESDA / JEDEC JS-001
4) ESD susceptibility, Charged Device Model “CDM” EIA / JESD 22-C101 or ESDA STM5.3.1
Number
1.1.1
1.1.2
1.1.3
1.2.1
1.3.1
1.3.2
1.4.1
1.4.6
1.4.2
1.4.3
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
17
Rev. 1.2, 2014-12-08