TLE6280GP_07 Datasheet, PDF (15/25 Pages) Infineon Technologies AG – 3-Phase Bridge Driver IC

Datasheet TLE6280GP
Electrical Characteristics (continued)
Parameter and Conditions
at Tj = –40 … +150 °C, unless otherwise specified
and supply voltage range VS = 8 ... 20V; f_PWM = 20kHz;
V_CBxx>7.5V
Symbol
dI /dt limitation
Non reaction level for dI/dt limitation (100% gate
driver capability) @ V_DIDT>0V
Non reaction level for dI/dt limitation (100% gate
driver capability) @ V_DIDT<0V
Max. V_Gxx at full reaction level for dI/dt limitation @
V_DIDT = -5V
@ T_J = -40°C
@ T_J = +25°C
@ T_J = +150°C
Min. falltime at full reaction level for dI/dt limitation
@ V_DIDT = +5V
@ T_J = -40°C
@ T_J = +25°C
@ T_J = +150°C
Impedance of DIDT Pin to GND
10kHz<f<10MHz; V_DIDT = 5V
VDIDT
VDIDT
VGxx(DIDT)
tfall (DIDT)
ZDIDT
Values
Unit
min typ max
2
--
-- V
--
-- -2 V
V
-- 1.9 3.0
-- 2.3 3.0
-- 3.4 4.2
µs
20 65
20 68
20 70
60
--
--
--
Ω
Default status of input pins:
To assure a defined status of all input pins in case of disconnection, these pins are internally
secured by pull-up or pull-down current sources with approx. 10µA.
The following table shows the default status of each input pin.
Input pin
ILx
IHx
DIDT
DT
MFP
Default status
Low (ext. Mosfet off)
High (ext. Mosfet off)
Low (no dI/dt limitation)
2µs dead time
Disable (pull-down)
15
2007-07-19