TLE6280GP_07 Datasheet, PDF (13/25 Pages) Infineon Technologies AG – 3-Phase Bridge Driver IC

Datasheet TLE6280GP
Electrical Characteristics (continued)
Parameter and Conditions
at Tj = –40 … +150 °C, unless otherwise specified
and supply voltage range VS = 8 ... 20V; f_PWM = 20kHz
Dynamic characteristics (continued)
Disable propagation time
Wake up time after enabling the device
Input propagation time (low on)
Input propagation time (low off)
Input propagation time (high on)
Input propagation time (high off)
Input propagation time difference
(all channels turn on)
Input propagation time difference
(all channels turn off)
Input propagation time difference
(one channel; high off – low on)
Input propagation time difference
(one channel; low off – high on)
Input propagation time difference
(all channels; high off – low on)
Input propagation time difference
(all channels; low off – high on)
DC-Resistance between CH and Bxx pin
I_CH-Bxx = 50mA; V_VS = V_Bxx = GND = 0V
@ T_J = -40°C
@ T_J = +25°C
@ T_J = +150°C
Boostrap diode forward voltage I_CH-Bxx = 50mA
@ T_J = -40°C
@ T_J = +25°C
@ T_J = +150°C
Symbol
Values
Unit
min typ max
tP(DIS)
tWU
tP(ILN)
tP(ILF)
tP(IHN)
tP(IHF)
tPD(an)
tPD(af)
tPD(1hfln)
tPD(1lfhn)
tPD(ahfln)
tPD(alfhn)
RCH-Bxx
VBSD
-- 350 700 ns
10 µs
-- 220 500 ns
-- 180 500 ns
-- 250 500 ns
-- 185 500 ns
20 55 70 ns
-- 11 50 ns
-- 60 150 ns
-- 80 150 ns
-- 60 150 ns
-- 80 150 ns
--
Ω
3.3 6.3
4.2 7.3
6.0 8.3
--
V
0.84 1.2
0.73 1.0
0.52 0.76
13
2007-07-19