HYS64D64020GBDL Datasheet, PDF (15/25 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

Table 9 I_DD Specification
HYS64D64020GBDL–[5/6/7/8]–B
Small Outline DDR SDRAM Modules
Electrical Characteristics
Unit Note¹⁾²⁾
512 MB
512 MB
512 MB
512 MB
× 64
× 64
× 64
× 64
2 Ranks
2 Ranks
2 Ranks
2 Ranks
–5
–6
–7
–8
Symbol typ. max. typ. max. typ. max. typ. max.
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
1280 1552 1208 1480 1032 1320 912
1160 mA ³⁾
1400 1672 1336 1560 1168 1400 1000 1240 mA ³⁾⁴⁾
96
144 96
144 88
128 80
112
mA
5)
736
896
720
880
560
640
480
560
mA
5)
384
544
395
448
320
400
288
352
mA
5)
272
384
288
336
240
288
208
256
mA
5)
960
1184 1008 1120 832
960
672
800
mA
5)
1600 1992 1496 1840 1272 1520 1048 1280 mA ³⁾⁴⁾
1680 2032 1632 1880 1368 1600 1104 1360 mA ³⁾
1720 2152 1652 2080 1496 1920 1346 1760 mA ³⁾
21
38
20
36
20
36
20
36
mA
5)
2560 3072 2248 2840 1856 2360 1600 2160 mA ³⁾⁴⁾
1) DRAM component currents only
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the component I_DDx data sheet values as:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending on
load conditions
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
15
V1.0, 2003-08