TLE7184F_15 Datasheet, PDF (14/38 Pages) Infineon Technologies AG – System IC for B6 motor drives

TLE7184F
MOSFET Driver
Electrical Characteristics MOSFET Drivers
V_S = 7.0 to 33 V, T_j = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)¹⁾
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
MOSFET driver output
5.5.6 Output source resistance
R_Sou
2
–
5.5.7 Output sink resistance
R_Sink
2
–
5.5.8 High level output voltage Gxx vs. V_Gxx1
–
11
Sxx
5.5.9 High level output voltage GHx vs. V_Gxx2
6
–
SHx²⁾
5.5.10 High level output voltage GHx vs. V_Gxx3
SHx²⁾⁴⁾
6
–
+V_diode
13.5 Ω
9
Ω
14
V
–
V
–
V
I_load=20mA
I_load=20mA
13,5V
<=V_VS<=45V³⁾,
V_IOV<=V_OVIOV,
V_VDH<=V_OVVDH
I_load=37,5mA
V_Vs=8V,
C_load=20nF,
dc=95%;
f_PWM=20kHz
V_Vs=8V,
C_load=20nF,
dc=95%;
f_PWM=20kHz;
passive
freewheeling
5.5.11 High level output voltage GLx vs. V_Gxx4
6.7
–
GND
5.5.12
5.5.13
5.5.14
Rise time
T_j = -40°C
T_j = 150°C
Fall time
T_j = -40°C
T_j = 150°C
High level output voltage (in
passive clamping)
t_rise
t_fall
V_GUV
100 –
150 –
80
–
150 –
–
–
–
V
ns
230
350
ns
210
290
1.2
V
V_VS=8V,
C_load=20nF,
dc=95%;
f_PWM=20kHz;
C_Load=11nF;
R_Load=1Ω
V_VS=7V
20-80%
sleep mode or
VS_UVLO^{2) 5)}
5.5.15 Pull-down resistor at BHx to GND R_BHUV –
–
80
kΩ
5.5.16 Pull-down resistor at VREG to GND R_VRUV –
–
30
kΩ
5.5.17 Bias current into BHx
I_BH
–
–
150
µA
V_BHx-V_SHx=5...13V;
no switching
5.5.18 Current between BHx and SHx
I_BSH
15
40
60
µA
V_BHx-V_SHx=5...13V;
V_SHX = GND
5.5.19 Resistor between SHx and GND R_SHGN 48
80
112 kΩ
5.5.20 Bias current out of SL
I_SL
–
–
2
mA 0V<=VSH<=VS+1
V; no switching;
V_CBS>5V
Data Sheet
14
Rev. 1.1, 2011-04-08