TLE4998P3CE1200 Datasheet, PDF (14/32 Pages) Infineon Technologies AG – Programmable Linear Hall Sensor

TLE4998P3C E1200
Electrical, Thermal and Magnetic Parameters
Calculation of the Junction Temperature
The total power dissipation P_TOT of the chip increases its temperature above the ambient
temperature.
The power multiplied by the total thermal resistance R_thJA (Junction to Ambient) leads
to the final junction temperature. R_thJA is the sum of the addition of the values of the two
components Junction to Case and Case to Ambient.
R_thJA = R_thJC + R_thCA
T_J = T_A + ∆T
∆T = R_thJA x P_TOT = R_thJA x ( V_DD x I_DD + V_OUT x I_OUT )
I_DD , I_OUT > 0, if direction is into IC
Example TLE4998P3C E1200 (assuming no load on Vout):
– V_DD = 5 V
– I_DD = 8 mA
– ∆T = 190 [K/W] x (5 [V] x 0.008 [A] + 0 [VA] ) = 7.6 K
For moulded sensors, the calculation with R_thJC is more adequate.
Magnetic Parameters
Table 5
Magnetic Characteristics
Parameter
Symbol Limit Values
Sensitivity
min. typ. max.
S¹⁾
± 0.2 ± 1.2²⁾ ± 48
Sensitivity error band
over temperature
Magnetic field range
S_E
MFR
-
± 0.8 ± 1.4
± 50 ± 100⁵⁾ ± 200
Integral nonlinearity Inl
-
± 0.01 ± 0.1
Magnetic offset error B_OS
-
Magnetic offset error B_OS
-
over temperature
-
± 30
± 100
± 400
± 200
± 400
Magnetic hysteresis B_HYS -
-
10
1) _{Defined as ∆DYPWM / ∆B}
2) _{Typical default sensitivity in range +/-100mT (not guaranteed, mG=0)}
Unit Notes
%/mT ³⁾
%
4)
See Figure 4
mT
Programmable ⁶⁾
%MFR ⁷⁾⁹⁾
µT
8)9)
µT
-40°C to 130°C ⁹⁾
130°C to 150°C ⁹⁾
See Figure 5
µT
10)
Data Sheet
14
Rev 1.1, 2009-09