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ICS951702 Datasheet, PDF (8/12 Pages) Integrated Device Technology – PIII™ System Clock Chip for DDR SDRAM
ICS951702
Advance Information
Electrical Characteristics - SDRAMT & C
TA = 0 - 70º C; VDD = 3.3 V +/-5%, VDDL = 2.5 V +/-5%; CL = 20 pF (unless otherwise stated)
PARAMETER SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Output High Voltage VOH2B IOH = -12.0 mA
Output Low Voltage VOL2B IOL = 12 mA
Output High Current IOH2B VOH = 1.7 V
Output Low Current
IOL2B VOL = 0.7 V
Rise Time
tr2B1
VOL = 0.4 V, VOH = 2.0 V
Fall Time
tf2B1
VOH = 2.0 V, VOL = 0.4 V
Duty Cycle
dt2B1
VT = 1.25 V
Skew
tsk2B1 VT = 1.25 V
Jitter, Cycle-to-cycle
tjcy
c-c
1
yc2B
VT = 1.25 V
Jitter, One Sigma
tj1s2B1 VT = 1.25 V
1Guaranteed by design, not 100% tested in production.
2
V
0.4 V
-19 mA
19
mA
1.6 ns
1.6 ns
47
53 %
250 ps
250 ps
150 ps
Electrical Characteristics - IOAPIC
TA = 0 - 70º C; VDD = 3.3 V +/-5%, VDDL = 2.5 V +/-5%; CL = 20 pF (unless otherwise stated)
PARAMETER SYMBOL
CONDITIONS
MIN TYP
Output High Voltage VOH4B IOH = -12 mA
2
Output Low Voltage VOL4B IOL = 12 mA
Output High Current IOH4B VOH = 1.7 V
Output Low Current
IOL4B VOL = 0.7 V
19
Rise Time1
Tr4B
VOL = 0.4 V, VOH = 2.0 V
Fall Time1
Tf4B
VOH = 2.0 V, VOL = 0.4 V
Duty Cycle1
Dt4B VT = 1.25 V
45
Jitter, One Sigma1
Tj1s4B VT = 1.25 V
Jitter, Absolute1
Tjabs4B VT = 1.25 V
-1
1Guaranteed by design, not 100% tested in production.
MAX
0.4
-19
2
2
55
0.5
1
UNITS
V
V
mA
mA
ns
ns
%
ns
ns
0664—07/29/02
8