844S012 Datasheet, PDF (8/24 Pages) Integrated Device Technology – Crystal-to-LVDS/LVCMOS Frequency Synthesizer

844S012 Data Sheet
CRYSTAL-TO-LVDS/LVCMOS FREQUENCY SYNTHESIZER
Table 4B. LVCMOS/LVTTL DC Characteristics, V_DD = V_DDOB = V_DDOC = 3.3V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
V_IH
Input High Voltage
2.2
V_IL
Input Low Voltage
-0.3
nMR, SSC[1:0],
QA_OE, QBC_OE
V_DD = V_IN = 3.465V
I_IH
Input
High Current
REF_IN, REF_SEL,
BYPASS, REF_OE,
F_SELA[1:0], F_SELB[2:0],
V_DD = V_IN = 3.465V
F_SELC[2:0]
V_DD + 0.3
0.8
10
150
nMR, SSC[1:0],
QA_OE, QBC_OE
V_DD = 3.465V, V_IN = 0V
-150
I_IL
Input
Low Current
REF_IN, REF_SEL,
BYPASS, REF_OE,
F_SELA[1:0], F_SELB[2:0],
V_DD = 3.465V, V_IN = 0V
-10
F_SELC[2:0]
V_OH
Output
High Voltage
QBx, QC, REF_OUTx
V_DDOB, V_DDOC, V_{DDO_REF} =
2.6
I_OH = -2mA
V_OL
Output
Low Voltage
QBx, QC, REF_OUTx
V_DDOB, V_DDOC, V_{DDO_REF} =
I_OH = 2mA
0.5
Units
V
V
µA
µA
µA
µA
V
V
Table 4C. LVDS DC Characteristics, V_DD = 3.3V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
V_OD
V_OD
V_OS
V_OS
Differential Output Voltage
V_OD Magnitude Change
Offset Voltage
V_OS Magnitude Change
Minimum
247
1.125
Typical
Maximum
454
50
1.375
50
Units
V
mV
V
mV
Table 5. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Test Conditions
NOTE: Characterized using an 18pF parallel resonant crystal.
Minimum Typical Maximum
Fundamental
25
50
7
Units
MHz

pF
844S012 REVISION B 08/25/15
8
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