ICS844008I Datasheet, PDF (3/18 Pages) Integrated Device Technology – FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER

ICS844008I-01
FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V_DD
4.6V
Inputs, V_I
Outputs, I_O
Continuous Current
Surge Current
-0.5V to V_DD + 0.5V
10mA
15mA
Package Thermal Impedance, θ_JA
32 TQFP, E-Pad
32.2°C/W (0 mps)
32 VFQFN
37°C/W (0 mps)
Storage Temperature, T_STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional op-
eration of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V_DD = 3.3V±5%, TA = -40°C TO 85°C
Symbol Parameter
Test Conditions
Minimum
V_DD
V_DDA
I_DD
I
DDA
Core Supply Voltage
Analog Supply Voltage
Power Supply Current
Analog Supply Current
3.135
V_DD – 0.20
Typical
3.3
3.3
Maximum
3.465
V_DD
275
20
Units
V
V
mA
mA
TABLE 4B. LVCMOS / LVTTL DC CHARACTERISTICS, V_DD = 3.3V±5%, TA = -40°C TO 85°C
Symbol Parameter
Test Conditions
Minimum
V_IH
Input High Voltage
V_IL
Input Low Voltage
I_IH
Input
MR, nPLL_SEL
High Current _{OEA, OEB, F_SEL}
I_IL
Input
MR, nPLL_SEL
Low Current _{OEA, OEB, F_SEL}
V_DD = 3.3V
V_DD = 3.3V
V = V = 3.465V
DD
IN
V_DD = V_IN = 3.465V
V_DD = 3.465V, V_IN = 0V
V_DD = 3.465V, V_IN = 0V
2
-0.3
-5
-150
Typical
Maximum
V_DD + 0.3
0.8
150
5
Units
V
V
µA
µA
µA
µA
TABLE 4C. LVDS DC CHARACTERISTICS, V_DD = 3.3V±5%, TA = -40°C TO 85°C
Symbol Parameter
Test Conditions
V_OD
Δ V_OD
V
OS
Δ V_OS
Differential Output Voltage
V_OD Magnitude Change
Offset Voltage
V_OS Magnitude Change
Minimum
325
1.2
Typical
1.3
Maximum
550
50
1.5
50
Units
mV
mV
V
mV
IDT^™ / ICS^™ LVDS FREQUENCY SYNTHESIZER
3
ICS844008AYI-01 REV. B NOVEMBER 21, 2008