71V016SA10PHG Datasheet, PDF (3/9 Pages) Integrated Device Technology – 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings⁽¹⁾
Symbol
Rating
Value
Unit
VDD
Supply Voltage Relative to
–0.5 to +4.6
V
VSS
VIN, VOUT Terminal Voltage Relative –0.5 to VDD+0.5
V
to VSS
TBIAS
Temperature Under Bias
–55 to +125
o_C
TSTG
Storage Temperature
–55 to +125
o_C
PT
Power Dissipation
1.25
W
IOUT
DC Output Current
50
mA
NOTE:
3834 tbl 03
1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol
Parameter⁽¹⁾
Conditions
Max. Unit
CIN Input Capacitance
VIN = 3dV
6 pF
CI/O I/O Capacitance
VOUT = 3dV
7 pF
NOTE:
3834 tbl 06
1. This parameter is guaranteed by device characterization, but not production tested.
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature
VSS
VDD
Commercial
0°C to +70°C
0V
See Below
Industrial
-40°C to +85°C
0V
See Below
3834 tbl 04
Recommended DC Operating
Conditions
Symbol
Parameter
Min. Typ. Max. Unit
VDD⁽¹⁾ Supply Voltage
3.15 3.3
3.6
V
VDD⁽²⁾ Supply Voltage
3.0
3.3
3.6
V
Vss Ground
0
0
0
V
VIH Input High Voltage
2.0
____ _VDD+0.3(3) _V
VIL Input Low Voltage
–0.3⁽⁴⁾
____
0.8
V
NOTES:
1. For 71V016SA10 only.
2. For all speed grades except 71V016SA10.
3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
3834 tbl 05
DC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
IDT71V016SA
Symbol
|ILI|
|ILO|
VOL
VOH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
VDD = Max., VIN = VSS to VDD
VDD = Max., CS = VIH, VOUT = VSS to VDD
IOL = 8mA, VDD = Min.
IOH = –4mA, VDD = Min.
DC Electrical Characteristics^(1,2)
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)
71V016SA10
Symbol
Parameter
Com'l Only
Max.
160
ICC
Dynamic Operating Current
CS ≤ VLC, Outputs Open, VDD = Max., f = fMAX^{(3) Typ.(4)}
(5)
65
71V016SA12
Com'l Ind
150 160
60
--
Min.
Max.
Unit
___
5
µA
___
5
µA
___
0.4
V
2.4
___
V
3834 tbl 07
71V016SA15
71V016SA20
Com'l Ind Com'l Ind Unit
130 130 120 120
mA
55
--
50
--
ISB ^{Dynamic Standby Power Supply Current}
CS ≥ VHC, Outputs Open, VDD = Max., f = fMAX⁽³⁾
45
40
45
35
35
30
ISB1 ^{Full Standby Power Supply Current (static)}
CS ≥ VHC, Outputs Open, VDD = Max., f = 0⁽³⁾
10
10
10
10
10
10
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles.
6.432
30
mA
10
mA
3834 tbl 08