844003 Datasheet, PDF (15/18 Pages) Integrated Device Technology – FemtoClock Crystal-to-3.3V LVDS Frequency Synthesizer

844003 Datasheet
Power Considerations
This section provides information on power dissipation and junction temperature for the 844003. 
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the 844003 is the sum of the core power plus the power dissipated in the load(s). 
The following is the power dissipation for V_DD = 3.3V + 5% = 3.465V, which gives worst case results.
Total Power_{_MAX} = V_{DD_MAX} * (I_{DD_MAX} + I_{DDA_MAX} + I_{DDO_MAX}) = 3.465V * 199mA = 689.5mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. 
The maximum recommended junction temperature is 125°C.
The equation for Tj is as follows: Tj = _JA * Pd_total + T_A
Tj = Junction Temperature
_JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T_A = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance _JA must be used. Assuming 1m/s air flow
and a multi-layer board, the appropriate value is 78°C/W per Table 7 below.
Therefore, Tj for an ambient temperature of 70°C with all outputs switching is:
70°C + 0.690W * 78°C/W = 123.8°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow, and the type of
board (multi-layer).
Table 7. Thermal Resistance _JA for 24-lead TSSOP Package
_JA by Velocity
Meters per Second
0
Multi-Layer PCB, JEDEC Standard Test Boards
82.3°C/W
1
78.0°C/W
2.5
75.9°C/W
©2016 Integrated Device Technology, Inc.
15
January 29, 2016