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ICS853S013I Datasheet, PDF (12/16 Pages) Integrated Device Technology – Output frequency
ICS853S013I Data Sheet
LOW SKEW, DUAL, 1-TO-3, DIFFERENTIAL-TO-2.5V, 3.3V LVPECL/ECL FANOUT BUFFER
Power Considerations
This section provides information on power dissipation and junction temperature for the ICS853S013I.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the CS853S013I is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for VCC = 3.8V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
• Power (core)MAX = VCC_MAX * IEE_MAX = 3.8V * 50mA = 190mW
• Power (outputs)MAX = 30.07mW/Loaded Output pair
If all outputs are loaded, the total power is 6 *30.07mW = 180.43mW
Total Power_MAX (3.8V, with all outputs switching) =190mW + 180.43mW = 370.43mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj = θJA * Pd_total + TA
Tj = Junction Temperature
θJA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
TA = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance θJA must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 71.1°C/W per Table 6 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.370W * 71.1°C/W = 111.3°C. This is well below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 6. Thermal Resistance θJA for 20 Lead SOIC, Forced Convection
θJA by Velocity
Meters per Second
0
Multi-Layer PCB, JEDEC Standard Test Boards
71.1°C/W
200
65.2°C/W
500
62°C/W
ICS853S013AMI REVISION A AUGUST 20, 2010
12
©2010 Integrated Device Technology, Inc.