ICS84025 Datasheet, PDF (3/12 Pages) Integrated Circuit Systems – CRYSTAL-TO-LVCMOS / LVTTL FREQUENCY SYNTHESIZER WITH FANOUT BUFFER

Integrated
Circuit
Systems, Inc.
PRELIMINARY
ICS84025
CRYSTAL-TO-LVCMOS / LVTTL
FREQUENCY SYNTHESIZER WITH FANOUT BUFFER
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V_DD
Inputs, V_I
Outputs, V_O
Package Thermal Impedance, θ_JA
Storage Temperature, T_STG
4.6V
-0.5V to V_DD + 0.5 V
-0.5V to V_DDO + 0.5V
46.2°C/W (0 lfpm)
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the DC Characteristics or AC Character-
istics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
TABLE
3A.
POWER
SUPPLY
DC
CHARACTERISTICS,
V=
DD
V=
DDA
3.3V
±
5%,
TA
=
0°C
TO
70°C
Symbol Parameter
Test Conditions
Minimum
V_DD
Core Supply Voltage
V_DDA
Analog Supply Voltage
3.135
3.135
3.135
V_DDO
Output Supply Voltage
2.375
1.65
I_DD
Power Supply Current
I_DDA
Analog Supply Current
I_DDO
Output Supply Current
Typical
3.3
3.3
3.3
2.5
1.8
71
15
70
Maximum
3.465
3.465
3.465
2.625
1.95
Units
V
V
V
V
V
mA
mA
mA
TABLE 3B. LVCMOS / LVTTL DC CHARACTERISTICS, V_DD = V_DDA = 3.3V ± 5%, TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum Typical
V_IH
Input High Voltage
PLL_SEL, MR,
F_SEL0, F_SEL1
2
V_IL
Input Low Voltage
PLL_SEL, MR,
F_SEL0, F_SEL1
-0.3
I_IH
MR, F_SEL1
Input High Current
PLL_SEL, F_SEL0
V_DD = V_IN = 3.465V
V_DD = V_IN = 3.465V
I_IL
MR, F_SEL1
Input Low Current
PLL_SEL, F_SEL0
V_DD = 3.465V, V_IN = 0V
V_DD = 3.465V, V_IN = 0V
-5
-150
V_DDO = 3.3V ± 5%
2.6
V_OH
Output High Voltage; NOTE 1
V_DDO = 2.5V ± 5%
1.8
V_DDO = 1.8V ± 0.15V
V_DDO- 0.45
V_DDO = 3.3V ± 5%
V_OL
Output Low Voltage; NOTE 1
V_DDO = 2.5V ± 5%
V_DDO = 1.8V ± 0.15V
NOTE 1: Outputs terminated with 50Ω to V_DDO/2. See Parameter Measurement Information Section,
"Output Load Test Circuit" diagrams.
Maximum
V_DD + 0.3
0.8
150
5
0.5
0.5
0.45
Units
V
V
µA
µA
µA
µA
V
V
V
V
V
V
TABLE 4. CRYSTAL CHARACTERISTICS
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
84025EM
Test Conditions
Minimum Typical Maximum
Fundamental
25
25.5
70
7
Units
MHz
Ω
pF
www.icst.com/products/hiperclocks.html
REV. A APRIL 16, 2003
3