ICS840004-01 Datasheet, PDF (3/13 Pages) Integrated Circuit Systems – FEMTOCLOCKS™ CRYSTAL-TO LVCMOS/LVTTL FREQUENCY SYNTHESIZER

Integrated
Circuit
Systems, Inc.
PRELIMINARY
ICS840004-01
FEMTOCLOCKS™ CRYSTAL-TO-
LVCMOS/LVTTL FREQUENCY SYNTHESIZER
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V_DD
Inputs, V_I
Outputs, V_O
Package Thermal Impedance, θ_JA
Storage Temperature, T_STG
4.6V
-0.5V to V_DD + 0.5 V
-0.5V to V_DD + 0.5V
73.2°C/W (0 lfpm)
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the DC Characteristics or AC Character-
istics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
TABLE
3A.
POWER
SUPPLY
DC
CHARACTERISTICS,
V
DDD
=
V
DDA
=
3.3V±5%,
V
DDO
=
3.3V±5%
OR
2.5V±5%,
TA
=
0°C
TO
70°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
V_DD
V_DDA
V_DDO
Core Supply Voltage
Analog Supply Voltage
Output Supply Voltage
3.135
3.3
3.465
V
3.135
3.3
3.465
V
3.135
3.3
3.465
V
2.375
2.5
2.625
V
I
DD
Power Supply Current
I_DDA
Analog Supply Current
I_DDO
Output Supply Current
90
mA
8
mA
5
mA
TABLE 3B. LVCMOS/LVTTL DC CHARACTERISTICS, V_DD = V_DDA = 3.3V±5%, V_DDO = 3.3V±5% OR 2.5V±5%, TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
V_IH
Input High Voltage
2
V_IL
Input Low Voltage
-0.3
I_IH
Input
OE, F_SEL0, F_SEL1
High Current ^{nPLL_SEL, MR,}
nXTAL_SEL, TEST_CLK
V_DD = V_IN = 3.465V
V_DD = V_IN = 3.465V
V_DD + 0.3
V
0.8
V
5
µA
150
µA
I_IL
Input
Low Current
OE, F_SEL0, F_SEL1
nPLL_SEL, MR,
nXTAL_SEL, TEST_CLK
V_DD = 3.465V, V_IN = 0V
V = 3.465V, V = 0V
DD
IN
-150
-5
µA
µA
V_OH
Output High Voltage; NOTE 1
V_DDO = 3.3V±5%
2.6
V_DDO = 2.5V±5%
1.8
V
V
V_OL
Output Low Voltage; NOTE 1
V_DDO = 3.3V or 2.5V±5%
0.5
V
NOTE 1: Outputs terminated with 50Ω to V_DDO/2. See Parameter Measurement Information, Output Load Test Circuits.
TABLE 4. CRYSTAL CHARACTERISTICS
Parameter
Test Conditions
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Drive Level
NOTE: Characterized using an 18pF parallel resonant crystal.
840004AG-01
www.icst.com/products/hiperclocks.html
3
Minimum Typical Maximum Units
Fundamental
25
MHz
50
Ω
7
pF
1
mW
REV. B JANUARY 3, 2006