IC62LV1008L Datasheet, PDF (8/11 Pages) Integrated Circuit Solution Inc – 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM

IC62LV1008L
IC62LV1008LL
WRITE CYCLE SWITCHING CHARACTERISTICS^(1,2) (Over Operating Range, Standard and Low Power)
Symbol Parameter
-55
-70
-100
Min. Max.
Min. Max.
Min. Max
Unit
tWC Write Cycle Time
tSCE1 CE1 to Write End
55 —
70 —
100 —
ns
50 —
65 —
80 —
ns
tSCE2 CE2 to Write End
50 —
65 —
80 —
ns
tAW Address Setup Time to Write End
50 —
65 —
80 —
ns
tHA Address Hold from Write End
0—
0—
0—
ns
tSA Address Setup Time
tPWE⁽⁴⁾ WE Pulse Width
0—
0—
0—
ns
45 —
55 —
80 —
ns
tSD Data Setup to Write End
25 —
30 —
40 —
ns
tHD Data Hold from Write End
tHZWE⁽³⁾ WE LOW to High-Z Output
tLZWE⁽³⁾ WE HIGH to Low-Z Output
0—
0—
0—
ns
— 30
— 30
— 40
ns
5—
5—
5—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, input pulse levels of 0.4V to 2.2V and output loading specified in
Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE1 LOW , CE2 HIGH and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
4. Tested with OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE Controlled)^(1,2)
ADDRESS
CE1
CE2
WE
DOUT
DIN
tWC
tSCE1
tHA
tSCE2
tAW
tPWE
tSA
tHZWE
DATA UNDEFINED
HIGH-Z
tLZWE
tSD
tHD
DATA-IN VALID
8
Integrated Circuit Solution Inc.
LPSR015-0A 1/3/2001