IC62LV1008L Datasheet, PDF (4/11 Pages) Integrated Circuit Solution Inc – 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM

IC62LV1008L
IC62LV1008LL
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
VCC
Vcc related to GND
–0.3 to +4.0
V
TBIAS
Temperature Under Bias
–40 to +85
°C
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE⁽¹⁾⁽²⁾
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25^oC, f = 1 MHz, VCC = 3.0 V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage VCC = Min., IOH = –1.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
VIH
Input HIGH Voltage⁽¹⁾
VIL
Input LOW Voltage⁽²⁾
ILI
Input Leakage
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC
Notes:
1. VIH(max.) = VCC +2.0V for pulse width less than 10 ns.
1. VIL(min.) = –2.0V for pulse width less than 10 ns.
Min.
Max.
Unit
2.0
—
V
—
0.4
V
2.2 VCC + 0.3 V
–0.2
0.4
V
–1
1
µA
–1
1
µA
4
Integrated Circuit Solution Inc.
LPSR015-0A 1/3/2001