IC-HGP Datasheet, PDF (7/20 Pages) IC-Haus GmbH – 3A HIGH-SIDE LASER SWITCH

iC-HGP
3 A HIGH-SIDE LASER SWITCH
preliminary
Rev A1, Page 7/20
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.0...5.5 V, Tj = -40...125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
203 Vhys(TTL) Hysteresis
Vhys() = Vt()hi − Vt()lo;
V(ELVDS) < 35% VDD, TTL
204 R(EN)
Pull-Down Resistor at ENx
V(ELVDS) < 35% VDD, TTL
205 V(EN)
Voltage at EN1, EN3, EN5
V(ELVDS) > 65% VDD, LVDS, ENx open
206 V(EN)
Voltage at EN2, EN4, EN6
V(ELVDS) > 65% VDD, LVDS, ENx open
207 Ri(EN) Resistor at EN1, EN3, EN5
V(ELVDS) > 65% VDD, LVDS, ENx open
208 Ri(EN) Resistor at EN2, EN4, EN6
V(ELVDS) > 65% VDD, LVDS, ENx open
209 Vdiff
Differential Voltage
Vdiff = |V(EN1,3,5) − V(EN2,4,6)|;
V(ELVDS) > 65% VDD, LVDS
210 V()
Input Voltage Range
V(ELVDS) > 65% VDD, LVDS
Input ELVDS
301 V(ELVDS) Voltage at ELVDS
ELVDS open
302 Ri(ELVDS) Resistor at ELVDS
303 Vt(ELVDS) Threshold Voltage TTL Fast to
TTL Slow
304 Vt(ELVDS) Threshold Voltage TTL Slow to
Error
305 Vt(ELVDS) Threshold Voltage Error to LVDS
Slow
306 Vt(ELVDS) Threshold Voltage LVDS Slow to
LVDS Fast
307 Vhys() Hysteresis
Ouput NER
401 Vsat(NER) Saturation Voltage at NER
ELVDS open, I(NER) = 2 mA
402 I(NER) Current in NER
ELVDS open, V(NER) > 0.6 V
Overtemperature
501 Toff
Overtemperature Shutdown
rising temperature
502 Ton
Overtemperature Release
falling temperature
503 Thys
Hysteresis
Toff − Ton
Power On
601 VON
Power On Voltage VDD
rising voltage
602 VOFF
Power Down Voltage VDD
falling voltage
603 Vhys
Hysteresis
Switch Power Supply
701 V(VNBL) Voltage at VNBL
VDD = 5 V, VBL = 12 V, I(VNBL)= 0. . . 350 mA
702 Isc(VNBL) Short circuit current
VDD = 5 V, VBL = 6 V, VNBL = 3 V
Unit
Min. Typ. Max.
50
mV
100 162 220 kΩ
31
33
35 %VDD
40
42
44 %VDD
75 109 155 kΩ
80 119 170 kΩ
200
mV
-0.2
VDD + V
0.2
48
50
52 %VDD
35
50
70
kΩ
16
20
24 %VDD
36
40
44 %VDD
56
60
64 %VDD
74
80
84 %VDD
10
25
50
mV
0.6
V
3
9
20
mA
130
170
°C
120
160
°C
5
°C
2.9
V
1.5
V
50
500 mV
6.8
7
7.2
V
360 440 700 mA