ICE30N160 Datasheet, PDF (8/9 Pages) Icemos Technology – Enhancement Mode MOSFET

Preliminary Data Sheet
ICE30N160
ICEMOS SUPERJUNCTION PATENT PORTFOLIO
ICEMOS GRANTED PATENTS
US7,429,772
US7,439,178
US7,446,018
US7,579,607
US7,723,172
US7,795,045
US7,846,821
US7,944,018
US8,012,806
US8,030,133
3D SEMI PATENTS LICENSED TO ICEMOS
US7,041,560B2
US7,023,069B2
US7,364,994
US7,227,197B2
US7,304,944B2
US7,052,982B2
US7,339,252
US7,410,891
US7,439,583
US7,227,197B2
US6,635,906
US6,936,867
US7,015,104
US9,109,110
US7,271,067
US7,354,818
US7,052,982,
US7,199,006B2
Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for
Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries.
SP-30N160-000-0
10/11/2013
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