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ICE30N160 Datasheet, PDF (1/9 Pages) Icemos Technology – Enhancement Mode MOSFET
Preliminary Data Sheet
ICE30N160
ICE30N160 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
Product Summary
ID
BVDSS
rDS(on)
Qg
TA=25oC
ID=250uA
VGS=10V
VDS=240V
22A
300V
0.16Ω
82nC
Max
Min
Max
Typ
D
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=11A
Avalanche current, repetitive
I AR
limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=22A,
Tj=125oC
Gate source voltage
static
VGS
AC (f>1Hz)
Power dissipation
Ptot
Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
22
66
500
10
50
±20
±30
208
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-30N160-000-0
10/11/2013
1