ICE30N160 Datasheet, PDF (3/9 Pages) Icemos Technology – Enhancement Mode MOSFET

Preliminary Data Sheet
ICE30N160
Parameter
Symbol
Conditions
Gate charge characteristics
Gate to source charge
Q_gs
Gate to drain charge
Q_gd
Gate charge total
Q_g
Gate plateau voltage
V_plateau
Reverse Diode
Diode forward voltage
V_SD
Reverse recovery time
t_rr
Reverse recovery charge
Q_rr
Peak reverse recovery current I_rm
V_DS=240 V, I_D=22A,
V_GS=10 V
V_GS=0V, I_S=I_F
V_RR=240V, I_S=I_F,
d_iFId_t=100 A/µS
Values
Unit
Min Typ Max
-
16
-
-
34
-
nC
-
85
-
-
6
-
V
- 1.0 1.2 V
- 440 -
ns
-
8
-
µC
-
35
-
A
SP-30N160-000-0
10/11/2013
3