ICE30N160 Datasheet, PDF (2/9 Pages) Icemos Technology – Enhancement Mode MOSFET

Preliminary Data Sheet
ICE30N160
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case ^a
R_thJC
Thermal resistance, junction-
ambient ^a
R_thJA
Soldering temperature, wave
soldering only allowed at leads
T _sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
-
- 0.6
o_C/W
-
- 62
-
- 260 ^oC
Electrical characteristics ^b , at T_j=25^oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
V_GS(th)
Zero gate voltage drain current I_DSS
Gate source leakage current
Drain-source
on-state resistance
I_GSS
R_{DS (on)}
V_GS=0 V, I_D=250µA
V_DS=V_GS, I_D=250µA
V_DS=300V, V_GS=0V,
T_j=25^oC
V_DS=300V, V_GS=0V,
T_j=150^oC
V_GS=±20 V, V_DS=0V
V_GS=10V, I_D=11A,
T_j=25^oC
V_GS=10V, I_D=11A,
T_j=150^oC
300 -
-
V
2.5 3 3.5
-
0.1 1
µA
-
- 100
-
- 100 nA
- 0.13 0.16
Ω
- 0.35 -
Gate resistance
R_G
f=1 MHZ, open drain
-
4
-
Ω
Dynamic characteristics
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
V_GS=0 V, V_DS=25 V,
f=1 MHz
- 2750 -
- 980 -
pF
-
25 -
Transconductance
g_fs
V_DS>2*I_D*R_DS, I_D=11A
-
23 -
S
Turn-on delay time
t_d(on)
-
10 -
Rise time
Turn-off delay time
t_r
t_d(off)
V_DS=150V, V_GS=10V,
-
I_D=22A, R_G=4Ω (External) _-
5
-
67 -
ns
Fall time
t_f
-
4.5 -
SP-30N160-000-0
10/11/2013
2