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HYMD512M646BFS8-J Datasheet, PDF (8/19 Pages) Hynix Semiconductor – Unbuffered DDR SO-DIMM
HYMD512M646B(L)FS8-J/M/K/H/L
DC CHARACTERISTICS I (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Input Leakage
Current
Add, CMD, /CS, CKE
CK0, /CK0, CK1, /CK1
Output Leakage Current
Output High Voltage
Output Low Voltage
ILI
ILO
VOH
VOL
Note :
1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 2.7V
Min.
-32
-16
-5
VTT + 0.76
-
Max
32
16
5
-
VTT - 0.76
Unit
Note
uA
1
uA
2
V
IOH = -15.2mA
V
IOL = +15.2mA
Rev. 0.1 / Jan. 2004
8