HYMD232726B8J-J Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD232726B(L)8-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
One bank; Active Precharge; tRC=tRC(min);
tCK= tCK(min); DQ,DM and DQS inputs
IDD0 _{changing twice per clock cycle; address and} 1080 990 990 900 mA
control inputs changing once per clock cycle
Operating Current
One bank; Active - Read - Precharge; Burst
Length=2; tRC=tRC(min); tCK=tCK(min);
IDD1 _{address and control inputs changing once per} 1080 990 990 900 mA
clock cycle
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down - mode; CKE=Low,
tCK=tCK(min)
90
1080
Idle Standby Current
/CS=High, All banks idle; tCK=tCK(min); CKE=
IDD2F
High; address and control inputs changing
once per clock cycle. VIN=VREF for DQ, DQS
450
405
405
360
mA
and DM
Active Power Down
Standby Current
One bank active; Power down mode;
IDD3P _{CKE=Low, tCK=tCK(min)}
135
mA
Active Standby Current
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per
clock cycle; Address and other control inputs
changing once per clock cycle
540 495 495 450 mA
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min);
IOUT=0mA
1530 1350 1350 1260
Operating Current
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing
mA
IDD4W _{once per clock cycle; tCK=tCK(min); DQ, DM} 1620 1530 1530 1440
and DQS inputs changing twice per clock cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at
100Mhz, 10*tCK for DDR266A & DDR266B at
133Mhz; distributed refresh
1620
1530
1530
1440
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK=tCK(min)
Normal
Low Power
27
13.5
mA
mA
Operating Current - Four
Bank Operation
IDD7
Four bank interleaving with BL=4 Refer to the
following page for detailed test condition
2430
2340
2340
2250
mA
Rev. 0.1/Oct. 02
8