HY62KF08802B Datasheet, PDF (8/10 Pages) Hynix Semiconductor – 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

HY62KF08802B Series
DATA RETENTION ELECTRIC CHARACTERISTIC
TA = -40°C to 85°C
Symbol
Parameter
VDR
Vcc for Data Retention
Iccdr
Data Retention Current
tCDR
tR
Chip Deselect to Data
Retention Time
Operating Recovery Time
Test Condition
/CS > Vcc - 0.2V,
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
Vcc=1.5V,
/CS > Vcc - 0.2V or
SL
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
LL
See Data Retention Timing Diagram
Notes:
1. Typical values are under the condition of TA = 25°C.
2. Typical value are sampled and not 100% tested
Min Typ^1. Max Unit
1.2
-
3.6
V
-
0.1
6
uA
-
0.1 20 uA
0
-
tRC
-
-
ns
-
ns
DATA RETENTION TIMING DIAGRAM 1
VCC
2.7V
DATA RETENTION MODE
tCDR
tR
VIH
VDR
/CS1
VSS
CS1>VCC-0.2V
DATA RETENTION TIMING DIAGRAM 2
VCC
2.7V
CS2
VDR
0.4V
VSS
DATA RETENTION MODE
tCDR
tR
CS2<0.2V
Rev.00 / Jan.02
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