HY62KF08802B Datasheet, PDF (2/10 Pages) Hynix Semiconductor – 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

HY62KF08802B Series
DESCRIPTION
The HY62KF08802B is a high speed, super low
power and 8Mbit full CMOS SRAM organized as
1M words by 8bits. The HY62KF08802B uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup
-. 1.2V(min) data retention
• Standard pin configuration
-. 44pin 400mil TSOP-II (Forward)
Product No.
HY62KF08802B-I
Voltage
(V)
2.7~3.6
Speed (ns)
55/70
Operation
Current/Icc(mA)
2
Note 1. I : Industrial
2. Current value is max.
Standby
Current(uA)
SL
LL
12
30
Temperature
(°C)
-40~85
PIN CONNECTION
A4
1
A3
2
A2
3
A1
4
A0
5
/CS1
6
NC
7
NC
8
I/O1
9
I/O2
10
Vcc
11
Vss
12
I/O3
13
I/O4
14
NC
15
NC
16
/WE
17
A19
18
A18
19
A17
20
A16
21
A15
22
44
A5
43
A6
42
A7
41
/OE
40
CS2
39
A8
38
NC
37
NC
36
I/O8
35
I/O7
34
Vss
33
Vcc
32
I/O6
31
I/O5
30
NC
29
NC
28
A9
27
A10
26
A11
25
A12
24
A13
23
A14
TSOPII
(Forward)
A0
A19
/CS1
CS2
/OE
/WE
BLOCK DIAGRAM
ROW
DECODER
I/O1
MEMORY ARRAY
1M x 8
I/O8
PIN DESCRIPTION
Pin Name
/CS1, CS2
/WE
/OE
I/O1~I/O8
Pin Function
Chip Select
Write Enable
Output Enable
Data Inputs/Outputs
Pin Name
A0~A19
Vcc
Vss
NC
Pin Function
Address Inputs
Power (2.7~3.6V)
Ground
No Connection
Rev.00 / Jan.02
2