HY62KF08802B Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

HY62KF08802B Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Typ
Max.
Unit
Vcc
Supply Voltage
2.7
3.0 or 3.3
3.6
V
Vss
Ground
0
0
0
V
VIH
Input High Voltage
2.2
-
Vcc+0.3
V
VIL
Input Low Voltage
-0.3^1.
-
0.6
V
Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns
2. Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
TA = -40°C to 85°C
Sym
Parameter
Test Condition
Min Typ^1. Max Unit
ILI Input Leakage Current
Vss < VIN < Vcc
-1 -
1
uA
ILO Output Leakage Current
Vss < VOUT < Vcc, /CS1 = VIH or
CS2 = VIL or /OE = VIH or /WE = VIL
-1 -
1
uA
Icc
Operating Power Supply Current
/CS1 = VIL, CS2 = VIH
VIN = VIH or VIL, II/O = 0mA
4 mA
/CS1 = VIL, CS2 = VIH 3.0~ 55ns
25 mA
ICC1 Average Operating Current
VIN = VIH or VIL, Cycle
Time = Min,
100% Duty, II/O = 0mA
3.6V
2.7~
3.3V
/CS1 < 0.2V, CS2 > Vcc-0.2V
70ns
55ns
70ns
20 mA
20 mA
15 mA
VIN < 0.2V or VIN > Vcc-0.2V,
Cycle Time = 1us,
3 mA
100% Duty, II/O = 0mA
ISB Standby Current (TTL Input)
/CS1 = VIH, CS2 = VIL
VIN = VIH or VIL
300 uA
/CS1 > Vcc - 0.2V,
3.0~ SL
0.2 12 uA
ISB1 Standby Current (CMOS Input)
CS2 < Vss + 0.2V,
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
3.6V _LL
2.7~ SL
3.3V LL
0.2 30 uA
0.2 12 uA
0.2 25 uA
VOL Output Low
IOL = 2.1mA
-
-
0.4 V
VOH Output High
IOH = -1.0mA
2.4 -
-
V
Note
1. Typical values are at Vcc = 3.0V TA = 25°C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
Condition Max.
Unit
CIN
Input Capacitance (Add, /CS1,CS2, /WE, /OE) VIN = 0V
8
pF
COUT
Output Capacitance (I/O)
VI/O = 0V
10
pF
Note : These parameters are sampled and not 100% tested
Rev.00 / Jan.02
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