HY628100B Datasheet, PDF (8/10 Pages) Hynix Semiconductor – 128K x8 bit 5.0V Low Power CMOS slow SRAM

HY628100B Series
DATA RETENTION ELECTRIC CHARACTERISTIC
TA = 0°C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É(I), unless otherwise specified
Sym
Parameter
Test Condition
Min Typ Max Unit
VDR Vcc for Data Retention
/CS1 > Vcc - 0.2V or CS2 < 0.2V,
2.0
-
-
V
VIN > Vcc - 0.2V or VIN < Vss + 0.2V
ICCDR Data
HY628100B
Vcc = 3.0V,
L
-
2
50 uA
Retention
/CS1>Vcc-0.2V or CS2< 0.2V, LL
-
1
10 uA
Current
HY628100B-E/I VIN > Vcc - 0.2V or
L
-
2
50 uA
VIN < Vss + 0.2V
LL
-
1
15 uA
tCDR Chip Deselect to Data Retention Time
0
-
-
ns
tR
Operating Recovery Time
tRC -
-
ns
(2)
Notes:
1. Typical values are under the condition of TA = 25°C.
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM 1
VCC
4.5V
2.2V
VDR
CS1
VSS
DATA RETENTION MODE
tCDR
tR
CS1>VCC-0.2V
DATA RETENTION TIMING DIAGRAM 2
VCC
4.5V
CS2
VDR
0.4V
VSS
DATA RETENTION MODE
tCDR
tR
CS2<0.2V
Rev 12 / Apr.2001
7