HY628100B Datasheet, PDF (5/10 Pages) Hynix Semiconductor – 128K x8 bit 5.0V Low Power CMOS slow SRAM

HY628100B Series
AC CHARACTERISTICS
Vcc = 4.5V~5.5V, TA = 0°C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É(I), unless otherwise specified
# Symbol
Parameter
-55
Min. Max.
-70
Min. Max.
-85
Min Max.
Unit
READ CYCLE
1 tRC Read Cycle Time
55
-
70
-
85
- ns
2 tAA* Address Access Time
-
55
-
70
-
85 ns
3 tACS* Chip Select Access Time
-
55
-
70
-
85 ns
4 tOE Output Enable to Output Valid
-
25
-
35
-
45 ns
5 tCLZ Chip Select to Output in Low Z
10
-
10
-
10
- ns
6 tOLZ Output Enable to Output in Low Z
5
-
5
-
5
- ns
7 tCHZ Chip Deselection to Output in High Z
0
20
0
25
0
30 ns
8 tOHZ Out Disable to Output in High Z
0
20
0
25
0
30 ns
9 tOH Output Hold from Address Change
10
-
10
-
10
- ns
WRITE CYCLE
10 tWC Write Cycle Time
55
-
70
-
85
- ns
11 tCW Chip Selection to End of Write
45
-
60
-
70
- ns
12 tAW Address Valid to End of Write
45
-
60
-
70
- ns
13 tAS
Address Set-up Time
0
-
0
-
0
- ns
14 tWP Write Pulse Width
40
-
50
-
55
- ns
15 tWR Write Recovery Time
0
-
0
-
0
- ns
16 tWHZ Write to Output in High Z
0
20
0
25
0
30 ns
17 tDW Data to Write Time Overlap
25
-
30
-
40
- ns
18 tDH Data Hold from Write Time
0
-
0
-
0
- ns
19 tOW Output Active from End of Write
5
-
5
-
5
- ns
Comment : tAA* and tACS* can meet 50ns with 30pF test load.
AC TEST CONDITIONS
TA = 0°C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É(I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW
CL = 5pF + 1TTL Load
Others
CL = 100pF + 1TTL Load
CL* = 30pF + 1TTL Load
Comment
* : Test load is 30pF for 50ns
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
Rev 12 / Apr.2001
4