HY628100B Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 128K x8 bit 5.0V Low Power CMOS slow SRAM

HY628100B Series
RECOMMENDED DC OPERATING CONDITION
TA = 0°C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É(I), unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
Unit
Vcc
Supply Voltage
4.5
5.0
5.5
V
Vss
Ground
0
0
0
V
VIH
Input High Voltage
2.2
-
Vcc+0.5
V
VIL
Input Low Voltage
-0.5(1)
-
0.8
V
Note :
1. VIL = -1.5V for pulse width less than 30ns and not 100% tested
DC ELECTRICAL CHARACTERISTICS
Vcc = 4.5V~5.5V, TA = 0°C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É(I), unless otherwise specified
Symbol
Parameter
Test Condition
Min. Typ. Max.
ILI
Input Leakage Current
Vss < VIN < Vcc
-1
-
1
ILO
Output Leakage Current
Vss < VOUT < Vcc,
-1
-
1
/CS1 = VIH or CS2 = VIL
or /OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS1 = VIL, CS2 = VIH,
-
-
10
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating
/CS1 = VIL, CS2 = VIH,
-
-
50
Current
VIN = VIH or VIL
Cycle Time = Min, 100% duty,
IIO = 0mA
ISB
TTL Standby Current
/CS1 = VIH or CS2 = VIL
-
-
2
(TTL Input)
VIN = VIH or VIL
ISB1
Standby
HY628100B
/CS1 > Vcc - 0.2V or L
-
2
100
Current
CS2 < 0.2V ,
LL
-
1
20
(CMOS Input) HY628100B-E/I VIN > Vcc - 0.2V or L
-
2
100
VIN < Vss + 0.2V
LL
-
1
30
VOL
Output Low Voltage
IOL = 2.1mA
-
-
0.4
VOH
Output High Voltage
IOH = -1mA
2.4
-
-
Unit
uA
uA
mA
mA
mA
uA
uA
uA
uA
V
V
Note : Typical values are at Vcc = 5.0V, TA = 25°C
CAPACITANCE
Temp = 25°C, f= 1.0MHz
Symbol
Parameter
Condition Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Output Capacitance VI/O = 0V
8
pF
Note : These parameters are sampled and not 100% tested
Rev 12 / Apr.2001
3