HYMD264646C8-M Datasheet, PDF (7/16 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD264646C(L)8-M/K/H/L
DC CHARACTERISTICS I (TA=0 to 70 ^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Min.
Input Leakage
Current
Add, CMD, /CS, /CKE
CK, /CK
ILI
-32
-12
Output Leakage Current
ILO
-10
Output High Voltage
VOH
VTT + 0.76
Output Low Voltage
VOL
-
Note :
1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 2.7V
3. These values are device characteristics.
Max
32
12
10
-
VTT - 0.76
Unit
uA
uA
V
V
Note
1
2
IOH = -15.2mA
IOL = +15.2mA
Rev. 0.1 / Mar. 2003
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