HYMD264646C8-M Datasheet, PDF (6/16 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

CAPACITANCE (TA=25 ^oC, f=100MHz )
HYMD264646C(L)8-M/K/H/L
Parameter
Pin
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Data Input / Output Capacitance
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE0, CKE1
CS0, CS1
CK0, /CK0, CK1, /CK1, CK2,/CK2
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
Symbol Min
CIN1
90
CIN2
90
CIN3
58
CIN4
58
CIN5
30
CIN6
12
CIO1
12
Max
104
104
72
72
45
17
17
Unit
pF
pF
pF
pF
pF
pF
pF
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Output
VTT
RT=50Ω
Zo=50Ω
CL=30pF
VREF
Rev. 0.1 / Mar. 2003
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