HYMD216M646CL6-D43 Datasheet, PDF (7/19 Pages) Hynix Semiconductor – Unbuffered DDR SO-DIMM

CAPACITANCE (TA=25^oC, f=100MHz )
HYMD216M646C(L)6-D43/D4/J
Parameter
Pin
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Data Input / Output Capacitance
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE0, CKE1
/CS0, /CS1
CK0, /CK0, CK1, /CK1
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
Symbol Min
CIN1
28
CIN2
28
CIN3
28
CIN4
28
CIN5
17
CIN6
8
CIO1
8
Max
40
40
40
40
20
11
11
Unit
pF
pF
pF
pF
pF
pF
pF
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Output
VTT
RT=50Ω
Zo=50Ω
CL=30pF
VREF
Rev. 0.1 / Apr. 2003
7