GM71CS17403C Datasheet, PDF (7/10 Pages) Hynix Semiconductor – 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

GM71C(S)17403C/CL
EDO Page Mode Cycle
Symbol
Parameter
tHPC
tRASP
tACP
tRHCP
tDOH
tCOL
tCOP
tRCHP
EDO Page Mode Cycle Time
EDO Page Mode RAS Pulse Width
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
Output data Hold Time from CAS low
CAS Hold Time referred OE
CAS to OE Setup Time
Read command Hold Time
from CAS Precharge
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403
C/CL-5
C/CL-6
C/CL-7
Unit
Min Max Min Max Min Max
Note
20 - 25 - 30 -
ns
20
- 100,000 - 100,000 - 100,000 ns
16
- 30 - 35 - 40 ns 9,17,19
30 - 35 - 40 -
ns
3-
3-
3
ns
9
7 - 10 - 13
ns
5-
5-
5
ns
30 - 35 - 40
ns
EDO Page Mode Read-Modify-Write Cycle
Symbol
Parameter
GM71C(S)17403 GM71C(S)17403
C/CL-5
C/CL-6
Min Max Min Max
GM71C(S)17403
C/CL-7
Min Max
Unit
tHPRWC EDO Page Mode Read-Modify-Write
Cycle Time
57 - 68 - 79 -
ns
tCPW
WE Delay Time from CAS Precharge
45 - 54 - 62 -
ns
Note
14
Refresh
Symbol
Parameter
tREF
Refresh period
tREF
Refresh period (L -Series)
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
- ₃₂ - _{32 - 32 ms}
- 128 - 128 - 128 ms
Note
2048
cycles
2048
cycles
Test Mode Cycle ^∗19
Symbol
Parameter
tWTS
Test Mode WE Setup Time
tWTH
Test Mode WE Hold Time
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
0 - 0 - 0 - ns
10 - 10 - 10 - ns
Note
Rev 0.1 / Apr’01