GM71CS17403C Datasheet, PDF (3/10 Pages) Hynix Semiconductor – 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

GM71C(S)17403C/CL
DC Electrical Characteristics (VCC = 5.0V+/-10%, VSS = 0V, TOPR = 0 ~ 70C)
Symbol
VOH
VOL
ICC1
Parameter
Output Level
Output "H" Level Voltage (IOUT = -2mA)
Output Level
Output "L" Level Voltage (IOUT = 2mA)
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling : tRC = tRC min)
ICC2
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)
ICC3
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
ICC4
EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
(tHPC = tHPC min)
ICC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)
ICC6
CAS-before-RAS Refresh Current
(tRC = tRC min)
Min Max Unit Note
2.0
VCC
V
0
50ns -
60ns -
70ns -
0.4 V
120
110 _{mA 1, 2}
100
-
2 mA
50ns -
60ns -
70ns -
50ns -
60ns -
-
70ns
-
-
50ns -
60ns -
100
90 _{mA 2}
80
90
80 ^{mA 1, 3}
70
1 _mA
150 uA 5
100
mA
90
70ns -
80
ICC7
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, tRC = 62.5us, tRAS <= 0.3us,
DOUT = High-Z, CMOS interface)
- 350 uA 4,5
ICC8
Standby Current RAS = VIH
CAS = VIL
DOUT = Enable
-
5 mA 1
IL(I)
Input Leakage Current
Any Input (0V<=VIN<= 6V)
IL(O)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 6V)
Note: 1. ICC depends on output load condition when the device is selected.
ICC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. CAS = L (<=0.2) while RAS = L (<=0.2).
5. L-version.
-10 10 uA
-10 10 uA
Rev 0.1 / Apr’01