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GM71CS17403C Datasheet, PDF (6/10 Pages) Hynix Semiconductor – 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
Write Cycle
Symbol
Parameter
tWCS Write Command Setup Time
tWCH Write Command Hold Time
tWP
Write Command Pulse Width
tRWL Write Command to RAS Lead Time
tCWL Write Command to CAS Lead Time
tDS
Data-in Setup Time
tD
Data-in Hold Time
H
Read- Modify-Write Cycle
Symbol
Parameter
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
OE Hold Time from WE
GM71C(S)17403C/CL
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
0-
0- 0-
ns
7 - 10 - 13 -
ns
7 - 10 - 10 -
ns
7 - 10 - 13 -
ns
7 - 10 - 13 -
ns
0- 0 - 0 -
ns
7 - 10 - 13 -
ns
Note
14
15
15
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
111 - 136 - 161 -
ns
67 - 79 - 92 -
ns
30 - 34 - 40 -
ns
42 - 49 - 57 -
ns
13 - 15 - 18 -
ns
Note
14
14
14
Refresh Cycle
Symbol
Parameter
tCSR
CAS Setup Time
(CAS-before-RAS Refresh Cycle)
tCHR
CAS Hold Time
(CAS-before-RAS Refresh Cycle)
tWRP WE Setup Time
(CAS-before-RAS Refresh Cycle)
tWRH WE Hold Time
(CAS-before-RAS Refresh Cycle)
tRPC
RAS Precharge to CAS Hold Time
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403
C/CL-5
C/CL-6
C/CL-7
Unit
Min Max Min Max Min Max
Note
5 - 5 - 5 - ns
7 - 10 - 10 - ns
0 - 0 - 0 - ns
10 - 10 - 10 - ns
5 - 5 - 5 - ns
Rev 0.1 / Apr’01