HYMD264M646BLF8-D43 Datasheet, PDF (5/17 Pages) Hynix Semiconductor – Unbuffered DDR SO-DIMM

ABSOLUTE MAXIMUM RATINGS
HYMD264M646B(L)F8-D43/D4
Parameter
Operating Temperature (Ambient)
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Output Short Circuit Current
Power Dissipation
Soldering Temperature Þ Time
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
50
1.0 x # of Components
260 / 10
Note : Operation at above absolute maximum rating can adversely affect device reliability
Unit
o_C
o_C
V
V
V
mA
W
o_{C / Sec}
DC OPERATING CONDITIONS (TA= 0 to 70 ^oC, Voltage referenced to VSS= 0V)
Parameter
Symbol
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching Pullup to Pulldown current Ratio
VDD
VDDQ
VIH
VIL
VTT
VREF
VIN(DC)
VID(DC)
VI(Ratio)
Min
2.5
2.5
VREF + 0.15
-0.3
VREF - 0.04
0.49*VDDQ
-0.3
0.36
0.71
Max
2.7
2.7
VDDQ + 0.3
VREF - 0.15
VREF + 0.04
0.51*VDDQ
VDDQ + 0.3
VDDQ + 0.6
1.4
Unit
Note
V
V
1
V
V
2
V
V
3
V
V
4
-
5
Note :
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. The value of VREF is approximately equal to 0.5VDDQ.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temper
ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum dif-
ference between pullup and pulldown drivers due to process variation.
Rev. 0.2 / Apr. 2004
5