HYMD264M646BLF8-D43 Datasheet, PDF (2/17 Pages) Hynix Semiconductor – Unbuffered DDR SO-DIMM

DESCRIPTION
64Mx64 bits
Unbuffered DDR SO-DIMM
HYMD264M646B(L)F8-D43/D4
Hynix HYMD264M646B(L)F8 series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual
In-Line Memory Modules (SO-DIMMs) which are organized as 64Mx64 high-speed memory arrays.
Hynix HYMD264M646B(L)F8 series consists of sixteen 32Mx8 DDR SDRAM in FBGA packages on a 200pin glass-
epoxy substrate. Hynix HYMD264M646B(L)F8 series provide a high performance 8-byte interface in 67.60mmX
31.75mm form factor of industry standard. It is suitable for easy interchange and addition.
Hynix HYMD264M646B(L)F8 series is designed for high speed of up to 200MHz and offers fully synchronous opera-
tions referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are
latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising
and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All
input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and
burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD264M646B(L)F8 series incorporates SPD(serial presence detect). Serial presence detect function is
implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify
DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
FEATURES
• 200-pin small outline dual in-line memory module
(SO-DIMM)
• 2.6V +/- 0.1V VDD and VDDQ Power supply
• Double data rate architecture; two data accesses
per clock cycle
• Differential Clock inputs (CK & /CK)
• Data inputs on DQS centers when write
(centered DQ)
• Bidirectional data strobes synchronized with output
data for read and input data for write
• Programmable CAS Latency 3
• Programmable Burst Length 2/4/8 with both
sequential and interleave mode
• Internal four bank operations with single pulsed
RAS
• Auto & Self refresh mode
; 8192 refresh cycles / 64ms
ORDERING INFORMATION
Part No.
HYMD264M646B(L)F8-D43
HYMD264M646B(L)F8-D4
Power Supply
Clock
Frequency
VDD=2.6V
VDDQ=2.6V
200MHz
(*DDR400)
CL-tRCD-tRP
Form Factor
3-3-3
3-4-4
200pin Unbuffered SO-DIMM
67.6mm x 31.75mm x 1mm
* JEDEC Defined Specifications compliant
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.2 / Apr. 2004
2