HY62V8400A Datasheet, PDF (5/11 Pages) Hynix Semiconductor – 512K x8 bit 3.3V Low Power CMOS slow SRAM

HY62V8400A Series
AC CHARACTERISTICS
TA = 0¡ Éto 70¡ É(Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
# Symbol
Parameter
70ns
Min. Max.
85ns
Min. Max.
100ns
Min Max.
Unit
READ CYCLE
1 tRC Read Cycle Time
70
-
85
-
100
-
ns
2 tAA
Address Access Time
-
70
-
85
- 100 ns
3 tACS Chip Select Access Time
-
70
-
85
- 100 ns
4 tOE Output Enable to Output Valid
-
40
-
45
-
50 ns
5 tCLZ Chip Select to Output in Low Z
10
-
10
-
10
- ns
6 tOLZ Output Enable to Output in Low Z
5
-
5
-
5
- ns
7 tCHZ Chip Deselecting to Output in High Z
0
25
0
30
0
30 ns
8 tOHZ Out Disable to Output in High Z
0
25
0
30
0
30 ns
9 tOH Output Hold from Address Change
15
-
15
-
15
- ns
WRITE CYCLE
10 tWC Write Cycle Time
70
-
85
-
100
-
ns
11 tCW Chip Selection to End of Write
60
-
70
-
80
- ns
12 tAW Address Valid to End of Write
60
-
70
-
80
- ns
13 tAS
Address Set-up Time
0
-
0
-
0
- ns
14 tWP Write Pulse Width
50
-
60
-
70
- ns
15 tWR Write Recovery Time
0
-
0
-
0
- ns
16 tWHZ Write to Output in High Z
0
25
0
30
0
30 ns
17 tDW Data to Write Time Overlap
30
-
35
-
40
- ns
18 tDH Data Hold from Write Time
0
-
0
-
0
- ns
19 tOW Output Active from End of Write
5
-
5
-
5
- ns
AC TEST CONDITIONS
TA = 0¡ Éto 70¡ É(Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
CL = 5pF + 1TTL Load
Others
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note
1. Including jig and scope capacitance
Rev 06 / Apr. 2001
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