HY62V8400A Datasheet, PDF (1/11 Pages) Hynix Semiconductor – 512K x8 bit 3.3V Low Power CMOS slow SRAM

Document Title
512K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No History
03
Revision History Insert
Revised
- Improved standby current
Isb1 : 30uA ¡ æ20uA
04
Revised
- Change Iccdr Value : 15uA => 20uA
05
Marking Information Add
Revised
- E.T (-25~85°C), I.T (-40~85°C) Part Insert
- AC Test Condition Add : 5pF Test Load
- VIH max : Vcc + 0.2V => Vcc + 0.3V
- VIL min : - 0.2V => - 0.3V
06
Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
HY62V8400A Series
512Kx8bit CMOS SRAM
Draft Date
Jul.06.2000
Remark
Final
Aug.04.2000 Final
Dec.04.2000 Final
Apr.30.2001 Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 06 / Apr. 2001
Hynix Semiconductor