HY62V8400A Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 512K x8 bit 3.3V Low Power CMOS slow SRAM

HY62V8400A Series
RECOMMENDED DC OPERATING CONDITION
TA = 0¡ Éto 70¡ É(Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Vcc
Supply Voltage
3.0
3.3
3.6
V
Vss
Ground
0
0
0
V
VIH
Input High Voltage
2.2
-
Vcc+0.3
V
VIL
Input Low Voltage
-0.3(1)
-
0.4
V
Note :
1. VIL = -1.5V for pulse width less than 30ns and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
TA = 0¡ Éto 70¡ É(Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
Symbol
Parameter
Test Condition
Min Typ Max Unit
ILI
Input Leakage Current
Vss < VIN < Vcc
-1
-
1 uA
ILO
Output Leakage Current
Vss < VOUT < Vcc, /CS = VIH or -1
-
1 uA
/OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS = VIL,
-
5 mA
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating Current
/CS = VIL
-
40 mA
Min Duty Cycle = 100%,
VIN = VIH or VIL, II/O = 0mA
ISB
TTL Standby Current
/CS = VIH ,
-
0.5 mA
(TTL Input)
VIN = VIH or VIL
ISB1
Standby Current
/CS > Vcc - 0.2V, LL
-
- 20 uA
(CMOS Input)
VIN > Vcc - 0.2V or LL-E/I
-
- 30 uA
VIN < Vss + 0.2V
VOL
Output Low Voltage
IOL = 2.1mA
-
- 0.4 V
VOH
Output High Voltage
IOH = -1mA
2.2 -
-
V
Note : Typical values are at Vcc = 3.3V, TA = 25°C
CAPACITANCE
Temp = 25°C, f= 1.0MHz
Symbol
Parameter
Condition Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Output Capacitance VI/O = 0V
8
pF
Note : This parameter is sampled and not 100% tested
Rev 06 / Apr. 2001
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