HY62KF08401C Datasheet, PDF (5/10 Pages) Hynix Semiconductor – 512Kx8bit full CMOS SRAM

HY62KF08401C Series
AC CHARACTERISTICS
TA = -40°C to 85°C, unless otherwise specified
# Symbol
Parameter
55ns
70ns
Unit
Min. Max. Min. Max.
READ CYCLE
1 tRC
Read Cycle Time
55
-
70
-
ns
2 tAA
Address Access Time
-
55
-
70
ns
3 tACS
Chip Select Access Time
-
55
-
70
ns
4 tOE
Output Enable to Output Valid
-
30
-
35
ns
5 tCLZ
Chip Select to Output in Low Z
10
-
10
-
ns
6 tOLZ
Output Enable to Output in Low Z
5
-
5
-
ns
7 tCHZ
Chip Deselection to Output in High Z 0
30
0
30
ns
8 tOHZ
Out Disable to Output in High Z
0
30
0
30
ns
9 tOH
Output Hold from Address Change
10
-
10
-
ns
WRITE CYCLE
10 tWC
Write Cycle Time
55
-
70
-
ns
11 tCW
Chip Selection to End of Write
50
-
60
-
ns
12 tAW
Address Valid to End of Write
50
-
60
-
ns
13 tAS
Address Set-up Time
0
-
0
-
ns
14 tWP
Write Pulse Width
45
-
50
-
ns
15 tWR
Write Recovery Time
0
-
0
-
ns
16 tWHZ Write to Output in High Z
0
20
0
20
ns
17 tDW
Data to Write Time Overlap
25
-
30
-
ns
18 tDH
Data Hold from Write Time
0
-
0
-
ns
19 tOW
Output Active from End of Write
5
-
5
-
ns
AC TEST CONDITIONS
TA = -40°C to 85°C, unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, tOW
Others
Value
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
V_TM=2.8V
D_OUT
1029 Ohm
CL(1)
1728 Ohm
Note
1. Including jig and scope capacitance
Rev.01 / Jun.01
4