HY62KF08401C Datasheet, PDF (2/10 Pages) Hynix Semiconductor – 512Kx8bit full CMOS SRAM

HY62KF08401C Series
DESCRIPTION
The HY62KF08401C is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
512K words by 8bits. The HY62KF08401C uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup
-. 1.2V(min) data retention
• Standard pin configuration
-. 32 - sTSOP - 8X13.4(Standard)
Product No.
HY62KF08401C-I
Voltage
(V)
2.7~3.6
Speed (ns)
55/70
Operation
Current/Icc(mA)
5
Note 1. I : Industrial
2. Current value is max.
Standby
Current(uA)
LL
SL
15
6
Temperature
(°C)
-40~85
PIN CONNECTION
A11
1
A9
2
A8
3
A13
4
/WE
5
A18
6
A15
7
VCC
8
A17
9
A16
10
A14
11
A12
12
A7
13
A6
14
A5
15
A4
16
32-sTSOP Forward
32
/OE
A0
31
A10
30
/CS
29
I/O8
28
I/O7
27
I/O6
26
I/O5
25
I/O4
24
VSS
23
I/O3
22
I/O2
21
I/O1
20
A0 A18
19
A1
18
A2
17
A3
/CS
/OE
/WE
BLOCK DIAGRAM
ROW
DECODER
I/O1
MEMORY ARRAY
512K x 8
I/O8
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A18
Pin Function
Chip Select
Write Enable
Output Enable
Address Input
Pin Name
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Data Input/Output
Power (2.7~3.6V)
Ground
Rev.01 / Jun.01
2