HY62KF08401C Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 512Kx8bit full CMOS SRAM

HY62KF08401C Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Typ
Max.
Unit
Vcc
Supply Voltage
2.7
3.0 or 3.3
3.6
V
Vss
Ground
0
0
0
V
VIH
Input High Voltage
2.2
-
Vcc+0.3
V
VIL
Input Low Voltage
-0.3^1.
-
0.6
V
Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns
2. Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
TA = -40°C to 85°C
Sym
Parameter
ILI Input Leakage Current
ILO Output Leakage Current
Icc Operating Power Supply Current
ICC1 Average Operating Current
ISB Standby Current (TTL Input)
ISB1 Standby Current (CMOS Input)
VOL Output Low
VOH Output High
Test Condition
Min Typ^1. Max Unit
Vss < VIN < Vcc
-1 -
1 uA
Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL
-1 -
1 uA
/CS = VIL,
VIN = VIH or VIL, II/O = 0mA
5 mA
/CS = VIL,
VIN = VIH or VIL,
2.7~3.6V
45 mA
Cycle Time = Min,
100% Duty, II/O = 0mA
2.7~3.3V
40 mA
/CS < 0.2V,
VIN < 0.2V or VIN > Vcc-0.2V,
Cycle Time = 1us,
5 mA
100% Duty, II/O = 0mA
/CS = VIH or VIN = VIH or VIL
0.5 mA
/CS > Vcc - 0.2V or
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
LL
0.2 15 uA
SL
0.2 6 uA
IOL = 2.1mA
-
- 0.4 V
IOH = -1.0mA
2.4 -
-
V
Note
1. Typical values are at Vcc = 3.0V TA = 25°C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
CIN
Input Capacitance (Add, /CS, /WE, /OE)
COUT
Output Capacitance (I/O)
Condition
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.01 / Jun.01
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