HY57V64820HG Datasheet, PDF (5/11 Pages) Hynix Semiconductor – 4 Banks x 2M x 8Bit Synchronous DRAM

CAPACITANCE (TA=25°C, f=1MHz)
Parameter
Input capacitance
Data input / output capacitance
Pin
CLK
A0 ~ A11, BA0, BA1, CKE, CS, RAS,
CAS, WE, DQM
DQ0 ~ DQ7
OUTPUT LOAD CIRCUIT
Symbol
Min
CI1
2
CI2
2.5
CI/O
2
HY57V64820HG
Max
Unit
4
pF
5
pF
6.5
pF
Output
Vtt=1.4V
RT=250 Ω
Output
50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)
Parameter
Symbol
Min.
Max
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
ILI
ILO
VOH
VOL
-1
1
-1
1
2.4
-
-
0.4
Note :
1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2.DOUT is disabled, VOUT=0 to 3.6V
Unit
Note
uA
1
uA
2
V
IOH = -4mA
V
IOL = +4mA
Rev. 0.5/Sep. 02
5